Quantum Processes in Semiconductors (Oxford Science Publications)

Features

• Cover Type: Paperback with 456 pages
• Published by: Oxford University Press, USA
• Edition: 4th Edition March 9, 2000
• Written in: English
• ISBN 10 Number: 0198505795
• ISBN 13 Number: 978-0198505792
• Book Dimensions: 9.1 x 6.1 x 1.1 inches
• Weighs: 1.6 pounds

Product Review

"A textbook and reference for graduate students and researchers that sets out the fundamental quantum processes that are important in the physics and technology of semiconductors. Limiting his coverage to bulk semiconductors as in the previous editions beginning in 1982, Ridley (physics, University of Essex) here augments the 1993 edition with new chapters to provide a deeper foundation for the quantum processes described, and a statistical bridge to phenomena involving charge transport. He also updates many of the existing topics."--SciTech Book News
"This new edition covers the material included in the earlier editions, supplemented by sections on mixed and entangled quantum states treated by a single particle density matrix method; more on the use of the Boltzmann equation and on transport phenomena; and further treatment of hot-electron phenomena. The main aim of the book is to interpret theoretical quantum phenomena for graduate experimental solid-state physicists."--Aslib Book Guide


Product Description
This book presents the fundamental quantum processes involved in the physics and technology of semiconductors. Its relatively informal style makes it an ideal introduction for graduate courses as well as a reliable reference for researchers in the field. This edition has been expanded to include new chapters on quantum transport, semi-classical transport and space-charge waves, extending the discussion to statistical, many-particle behavior in transport phenomena. The author has also taken the opportunity to update other sections. As with previous editions the text restricts its attention to bulk semiconductors. It traces the path from quantum processes describable by density matrices, through the semi-classical Boltzmann equation and its solutions, to the drift-diffusion description of space-charge waves, the latter appearing in the contexts of negative differential resistance, acoustoelectric and recombination instabilities.